Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25° C, 1 ms VGE .
• International standard package JEDEC TO-264 AA
• Two mached dice connected in parallel
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
G C E C = Collector TAB = Collector
G = Gate E = Emitter
Mounting torque (M4)
0.9/6 10 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 80N60 |
Cmos |
N-Channel MOSFET | |
2 | 80N60B |
IXYS |
High Current IGBT | |
3 | 80N02 |
ON Semiconductor |
Power MOSFET | |
4 | 80N03 |
GFD |
MOSFET | |
5 | 80N03L |
Siemens |
SPB80N03L | |
6 | 80N055 |
NEC |
NP80N055 | |
7 | 80N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
8 | 80N06 |
UTC |
60V N-CHANNEL POWER MOSFET | |
9 | 80N07 |
UTC |
N-CHANNEL MOSFET | |
10 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
11 | 80N08A |
INCHANGE |
N-Channel MOSFET | |
12 | 80N10 |
IXYS |
Power MOSFETs |