80N03 - GFD

80N03 MOSFET

The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 80N03 VDS 30V RDS(ON) -- ID 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and curren.

Features

� VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
� High density cell design for ultra low Rdson
� Fully characterized Avalanche voltage and current
� Good stabilty and unifomity with high EAS
� Excellent package for good heat dissipation
� Special process technology for high ESD capability TO-252-2L top view Application
� Power switching application
� Hard Switched and High Frequency Circuits
� Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE BRAND 80N03 TO-252-2L OGFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 80N03 Absolute Maximum Ratings (TC=25℃, unl.