80N10 - IXYS

80N10 Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I D25 I L(RMS) I DM IAR EAR EAS dv/dt P D T J TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25.

Features

l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) l Molding epoxies meet UL 94 V-0 flammability classification Advantages l Easy to mount l Space savings l High power density © 2000 IXYS All rights reserved 98739 (8/00) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5
• ID25, pulse test 35 55 S 4800 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 1460 pF 490 pF 41 ns VGS = 10 V, VDS = 0.5
• V.