SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin .
• N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
RDS(on) 0.006 Ω
• Avalanche rated
• Logic Level
• dv/dt rated
• 175°C operating temperature
Type SPP80N03L SPB80N03L
Package
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A
ID
TC = 25 °C, TC = 100 °C
1)
Pulsed drain curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 80N03 |
GFD |
MOSFET | |
2 | 80N02 |
ON Semiconductor |
Power MOSFET | |
3 | 80N055 |
NEC |
NP80N055 | |
4 | 80N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
5 | 80N06 |
UTC |
60V N-CHANNEL POWER MOSFET | |
6 | 80N07 |
UTC |
N-CHANNEL MOSFET | |
7 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
8 | 80N08A |
INCHANGE |
N-Channel MOSFET | |
9 | 80N10 |
IXYS |
Power MOSFETs | |
10 | 80N240K6 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | 80N30 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
12 | 80N60 |
Cmos |
N-Channel MOSFET |