80N08A - INCHANGE

80N08A N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power switching applications ·Hard switched and high frequency cir.

Features

·Drain Current: ID= 80A@ TC=25℃
·Drain Source Voltage : VDSS= 80V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Power switching applications
·Hard switched and high frequency circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Tempera.