This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STD80N240K6 Product.
Order code
VDS
RDS(on) max.
ID
STD80N240K6
800 V
220 mΩ
16 A
•
Worldwide best RDS(on) x area
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
AM01476v1_tab
• Flyback converter
• Adapters for tablets, notebook and AIO
• LED lighting
Description
This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 80N02 |
ON Semiconductor |
Power MOSFET | |
2 | 80N03 |
GFD |
MOSFET | |
3 | 80N03L |
Siemens |
SPB80N03L | |
4 | 80N055 |
NEC |
NP80N055 | |
5 | 80N06 |
Inchange Semiconductor |
N-Channel MOSFET | |
6 | 80N06 |
UTC |
60V N-CHANNEL POWER MOSFET | |
7 | 80N07 |
UTC |
N-CHANNEL MOSFET | |
8 | 80N08 |
Unisonic Technologies |
N-CHANNEL MOSFET | |
9 | 80N08A |
INCHANGE |
N-Channel MOSFET | |
10 | 80N10 |
IXYS |
Power MOSFETs | |
11 | 80N30 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
12 | 80N60 |
Cmos |
N-Channel MOSFET |