Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number : EN4901B 3SK264 N-Channnel Dual Gate MOSFET 15V,30mA,PG=23dB,NF=1.1dB, CP4 http://onsemi.com Features • Enhancement type • Easy AGC (Cut off at VG2S=0V) • Small noise figure • Excels in cross modulation characteristics Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate1-to-Source Voltag.
• Enhancement type
• Easy AGC (Cut off at VG2S=0V)
• Small noise figure
• Excels in cross modulation characteristics
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDS VG1S VG2S ID PD Tch
Tstg
Conditions
Ratings 15 ±8 ±8 30
200 125 --55 to +125
Unit V V V mA
mW °C °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functiona.
3SK264 - Sanyo Semicon Device
Ordering number:ENN4901 N-Channel Silicon MOSFET 3SK264 VHF Tuner, High-Frequency Amplifier Applications Features · En.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK260 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 2 | 3SK263 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 3SK263 |
ON Semiconductor |
N-Channnel Dual Gate MOSFET |
|
| 4 | 3SK265 |
Sanyo Semicon Device |
VHF/ CATV Tuner/ High-Frequency Amp Applications |
|
| 5 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 6 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 7 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 8 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 9 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 10 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 11 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 12 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|