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Ordering number : EN4423C 3SK263 SANYO Semiconductors DATA SHEET 3SK263 Features • Enhancement type • Small noise figure • Small cross modulation N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate1-to-Source Volt.
• Enhancement type
• Small noise figure
• Small cross modulation
N-Channel Silicon MOSFET (Dual Gate)
FM Tuner, VHF Tuner, High-Frequency Amplifier Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature
VDS VG1S VG2S ID PD Tch
Storage Temperature
Tstg
Conditions
Ratings 15 ±8 ±8 30
200 125 --55 to +125
Unit V V V mA
mW °C °C
Package Dimensions unit : mm (typ) 7014A-006
2.9 0.4
43
3SK263-5-TG-E
0.1
Product & Package Informati.
3SK263 - ON Semiconductor
Ordering number : EN4423D 3SK263 N-Channnel Dual Gate MOSFET 15V,30mA,PG=21dB,NF=1.1dB, CP4 http://onsemi.com Features.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK260 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 2 | 3SK264 |
ON Semiconductor |
N-Channnel Dual Gate MOSFET |
|
| 3 | 3SK264 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 4 | 3SK265 |
Sanyo Semicon Device |
VHF/ CATV Tuner/ High-Frequency Amp Applications |
|
| 5 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 6 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 7 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 8 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 9 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 10 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 11 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 12 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|