Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features · MOSFET with a back gate terminal. · Enhancement type. · Small ON resistance. · Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5.
· MOSFET with a back gate terminal.
· Enhancement type.
· Small ON resistance.
· Small-sized package permitting 3SK248-applied sets
to be made smaller and slimmer.
Package Dimensions
unit:mm
2100A
1.9
0.95 0.95 0.4
43
[3SK248]
0.16 0 to 0.1
1.5 0.5 2.5
12 0.95 0.85
2.9
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Drain-to-Source Brea.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK240 |
Toshiba Semiconductor |
GaAs N-Channel Dual Gate MES Type FET |
|
| 2 | 3SK241 |
Panasonic |
Field Effect Transistors |
|
| 3 | 3SK249 |
Toshiba Semiconductor |
N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR |
|
| 4 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 5 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 6 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 7 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 8 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 9 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 10 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 11 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 12 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|