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TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate 1-drain voltage Gate 2-drain voltage Gate 1-source voltage Gate 2-source voltage Gate 1 current Gate 2 current Power dissipation Channel temperature Storage temperature range S.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK241 |
Panasonic |
Field Effect Transistors |
|
| 2 | 3SK248 |
Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET |
|
| 3 | 3SK249 |
Toshiba Semiconductor |
N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR |
|
| 4 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 5 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 6 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 7 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 8 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 9 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 10 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 11 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 12 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|