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of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.
• Low Noise Figure
• High Power Gain
• Enhancement Typ.
0.4 −0.05
+0.1
NF = 2.0 dB TYP. (@ = 900 MHz) Gps = 17.5 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS (Unit: mm)
0.4 −0.05 0.4 −0.05 0.16 −0.06
+0.1
2.8 −0.3 1.5
2
+0.2
+0.1
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Mini Mold Package. (SC-61)
(1.8) 0.85 0.95 2.9±0.2
+0.2 −0.1
3 4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3SK233 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 2 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
|
| 3 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 4 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|
| 6 | 3SK222 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 7 | 3SK223 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 8 | 3SK224 |
NEC |
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
|
| 9 | 3SK225 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 10 | 3SK226 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 11 | 3SK227 |
Panasonic |
Silicon N-Channel 4-pin MOSFET |
|
| 12 | 3SK228 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused |
|