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3SK231 |
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| Part Number | 3SK231 |
| Manufacturer | NEC |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir... |
| Features |
• Low Noise Figure • High Power Gain • Enhancement Typ. 0.4 −0.05 +0.1 NF = 2.0 dB TYP. (@ = 900 MHz) Gps = 17.5 dB TYP. (@ = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 1.5 2 +0.2 +0.1 • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Small Package : 4 Pins Mini Mold Package. (SC-61) (1.8) 0.85 0.95 2.9±0.2 +0.2 −0.1 3 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total ... |
| Document |
 3SK231 Data Sheet
PDF 106.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK233 |
Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET |
|
| 2 | 3SK239A |
Hitachi Semiconductor |
GaAs Dual Gate MES FET |
|
| 3 | 3SK206 |
NEC |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD |
|
| 4 | 3SK207 |
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
| 5 | 3SK22 |
Toshiba |
Silicon N-Channel Transistor |
|