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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2V(Max) @IC= 5A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Vo.
lector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff Current VCE= 20V; IB= 0 hFE DC Current Gain IC= 5A; VCE= 5V MIN TYP. MAX UNIT 30 V 5V 30 V 2.0 V 2.0 mA 10 isc website：www.iscsemi.cn 2 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD880 |
INCHANGE |
NPN Transistor |
|
| 2 | 3DD880X |
INCHANGE |
NPN Transistor |
|
| 3 | 3DD8B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DD8C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 3DD8D |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 3DD8E |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 3DD8F |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 9 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 10 | 3DD100A |
INCHANGE |
NPN Transistor |
|
| 11 | 3DD100B |
INCHANGE |
NPN Transistor |
|
| 12 | 3DD100C |
INCHANGE |
NPN Transistor |
|