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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of s.
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 for all, QZJ840611A, QZJ840611 for 3DD100 and 3DD101. 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP for all, JT, JCT, GS, G, G+ for 3DD100 and 3DD101. TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V Emitter-Base Voltage Max. Collector Current VEBO I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 2 | 3DD100A |
INCHANGE |
NPN Transistor |
|
| 3 | 3DD100B |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD100C |
INCHANGE |
NPN Transistor |
|
| 5 | 3DD100D |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD100E |
INCHANGE |
NPN Transistor |
|
| 7 | 3DD101 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 8 | 3DD101A |
SJ |
Power Transistor |
|
| 9 | 3DD101A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 3DD101B |
SJ |
Power Transistor |
|
| 11 | 3DD101B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 3DD101C |
SJ |
Power Transistor |
|