3DD880X - INCHANGE

3DD880X NPN Transistor

·X: DC Current Gain -hFE = 55-75@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B.

Features

METER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICES Collector Cutoff Current VCE= 100V; VEB= 0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 15V 3DD880X MIN MAX UNIT 100 V 1.2 V 1.8 V 0.2 mA 0.1 mA 0.5 mA 55 75 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information .