Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJ.
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Specifications Parameter name Collector-Emitter Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junction Temperature Storage Temperature Collector-Emitter Leakag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
2 | 3DD100A |
INCHANGE |
NPN Transistor | |
3 | 3DD100B |
INCHANGE |
NPN Transistor | |
4 | 3DD100C |
INCHANGE |
NPN Transistor | |
5 | 3DD100D |
INCHANGE |
NPN Transistor | |
6 | 3DD100E |
INCHANGE |
NPN Transistor | |
7 | 3DD101 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
8 | 3DD101A |
SJ |
Power Transistor | |
9 | 3DD101A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | 3DD101B |
SJ |
Power Transistor | |
11 | 3DD101B |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
12 | 3DD101C |
SJ |
Power Transistor |