3DD100B - INCHANGE

3DD100B NPN Transistor

·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.

Features

L PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cutoff Current VCE= 50V; IB= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE DC Current Gain IC= 0.5A; VCE= 5V MIN MAX UNIT 150 V 200 V 4 V 1.5 V 0.2 mA 0.5 mA 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information .