3DD101A - Inchange Semiconductor

3DD101A Silicon NPN Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated power supply applications. A.

Features

ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 50V; IB=0 ICBO Collector Cutoff Current VCB= 50V; IE=0 hFE DC Current Gain IC= 2A; VCE= 5V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 12V 3DD101A MIN MAX UNIT 100 V 150 V 4 V 0.8 V 2.0 mA 1.0 mA 20 1 MHz NOTICE： ISC reserves the rig.