·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.
RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A ICEO Collector Cutoff Current VCE= 50V; IB= 0 ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE DC Current Gain IC= 2A; VCE= 5V MIN MAX UNIT 200 V 250 V 4 V 1.5 V 1.0 mA 2.0 mA 20 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet a.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD101 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
2 | 3DD101A |
SJ |
Power Transistor | |
3 | 3DD101A |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 3DD101B |
SJ |
Power Transistor | |
5 | 3DD101B |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | 3DD101D |
SJ |
Power Transistor | |
7 | 3DD101D |
INCHANGE |
NPN Transistor | |
8 | 3DD101E |
SJ |
Power Transistor | |
9 | 3DD101E |
INCHANGE |
NPN Transistor | |
10 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
11 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
12 | 3DD100A |
INCHANGE |
NPN Transistor |