The devices are PNP transistors manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The 2STF2340 complementary PNP is the 2STF1340. 4 4 3 2 1 3 2 1 SOT-89 SOT-223 Figure 1. Internal schematic diagram Table 1. Device .
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
Applications
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ DC-DC converter
Description
The devices are PNP transistors manufactured using new “PB-HDC” (power bipolar high density current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The 2STF2340 complementary PNP is the 2STF1340.
4 4
3 2
1
3 2 1
SOT-89
SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
2ST.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STF2360 |
STMicroelectronics |
Low voltage fast-switching PNP power transistors | |
2 | 2STF2220 |
ST Microelectronics |
High Gain Low Voltage PNP Power Transistor | |
3 | 2STF2280 |
STMicroelectronics |
Low voltage high performance PNP power transistor | |
4 | 2STF1340 |
STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistor | |
5 | 2STF1360 |
ST Microelectronics |
Low voltage fast-switching NPN power transistors | |
6 | 2STF1525 |
ST Microelectronics |
Transistors | |
7 | 2STF1550 |
STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistors | |
8 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
9 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
10 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
11 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
12 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor |