2STF1525 - ST Microelectronics

2STF1525 Transistors

The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Marking 1525 Package SOT-89 Packaging Tape and reel Order codes 2STF1525 June 2009 Doc ID 15794 Rev 1 1/7 www..

Features

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■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 4 3 2 1 Applications
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■ Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. SOT-89 Internal schematic diagram Description The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Marking 1525 Package SOT-89 Packaging Tape and.