Figure 1. The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Internal schematic diagram www.DataSheet4U.com Table 1. Device summary Marking 2280 Package SOT-89 Packaging Tape and reel Ord.
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Low collector-emitter saturation voltage High current gain characteristic Fast switching speed
4 3 2 1
Applications
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DC-DC converter, voltage regulation General purpose switching equipment
SOT-89
Description
Figure 1. The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Internal schematic diagram
www.DataSheet4U.com
Table 1.
Device summary
Marking 2280 Package SOT-89 Packaging Tape and reel
Order code 2STF2280
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STF2220 |
ST Microelectronics |
High Gain Low Voltage PNP Power Transistor | |
2 | 2STF2340 |
STMicroelectronics |
Low voltage fast-switching PNP power transistors | |
3 | 2STF2360 |
STMicroelectronics |
Low voltage fast-switching PNP power transistors | |
4 | 2STF1340 |
STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistor | |
5 | 2STF1360 |
ST Microelectronics |
Low voltage fast-switching NPN power transistors | |
6 | 2STF1525 |
ST Microelectronics |
Transistors | |
7 | 2STF1550 |
STMicroelectronics |
Low voltage fast-switching NPN power bipolar transistors | |
8 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
9 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
10 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
11 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
12 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor |