The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STA2510 Package TO-3P Packaging Tube Order code 2STA2510 May 2008 . Rev 2 1/7 www.st.com A7 Electrical rat.
■
■
■
■
■
High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2510 Package TO-3P Packaging Tube
Order code 2STA2510
May 2008
.
Rev 2
1/7
www.st.com A7
Electrical ratings
www.DataSheet4U.com
2STA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2STA2120 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
2 | 2STA2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
3 | 2STA1694 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
4 | 2STA1695 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor | |
5 | 2STA1943 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
6 | 2STA1962 |
ST Microelectronics |
High power PNP epitaxial planar bipolar transistor | |
7 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
8 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors | |
9 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor | |
10 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors | |
11 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor | |
12 | 2ST31A |
INCHANGE |
NPN Transistor |