Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Isc N-Channel MOSFET Transistor 2SK3505 ·FEATURES ·With To-220F packaging ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain.
·With To-220F packaging
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
56
PD
Total Dissipation @TC=25℃
60
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SY.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK350 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 3 | 2SK3501 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK3501-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 5 | 2SK3502-01MR |
Fuji Electric |
N CHANNEL SILICON POWER MOSET |
|
| 6 | 2SK3503 |
Kexin |
N-Channel MOSFET |
|
| 7 | 2SK3503 |
NEC |
N-Channel MOSFET |
|
| 8 | 2SK3504-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 9 | 2SK3505-01MR |
Sanyo Semicon Device |
N-Channel MOSFET |
|
| 10 | 2SK3506 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 11 | 2SK3507 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |
|
| 12 | 2SK3508-01MR |
Fuji |
N-CHANNEL SILICON POWER MOSFET |
|