2SK3506 - Toshiba Semiconductor

2SK3506 N-Channel MOSFET

2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3506 Relay Drive and DC-DC Converter Applications Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Unit: mm • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) www.DataSheet4U.com • Enh.

Features

ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics T.