2SK350 - Inchange Semiconductor

2SK350 N-Channel MOSFET Transistor

·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-S.

Features

DS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS= 0 VSD Diode Forward Voltage IF= 5A; VGS=0 2SK350 MIN TYP MAX UNIT 450 V 1.0 5.0 V 0.67 0.90 Ω ±1 uA 1 mA 0.85 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment .