·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 95 W TJ Max. Operating Junction Tempe.
·Drain Current : ID= 10A@ TC=25℃
·Drain Source Voltage
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.75Ω(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Pluse
40
A
PD
Total Dissipation @TC=25℃
95
W
TJ
Max. Op.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK350 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK350 |
Hitachi |
Silicon N-Channel MOSFET | |
3 | 2SK3501-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
4 | 2SK3502-01MR |
Fuji Electric |
N CHANNEL SILICON POWER MOSET | |
5 | 2SK3503 |
Kexin |
N-Channel MOSFET | |
6 | 2SK3503 |
NEC |
N-Channel MOSFET | |
7 | 2SK3504-01 |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
8 | 2SK3505 |
INCHANGE |
N-Channel MOSFET | |
9 | 2SK3505-01MR |
Sanyo Semicon Device |
N-Channel MOSFET | |
10 | 2SK3506 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK3507 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
12 | 2SK3508-01MR |
Fuji |
N-CHANNEL SILICON POWER MOSFET |