Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2190 [2SK3449] 8.0 1.0 1.4 4.0 1.0 3.3 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sou.
•
•
•
Package Dimensions
unit : mm 2190
[2SK3449]
8.0 1.0 1.4 4.0 1.0 3.3
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75
15.5
11.0
0.7
1
2
3
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1.7
Specifications
1 : Source 2 : Drain 3 : Gate SANYO : TO-126ML
Ratings 60 ± 20 4.8 19.2 1 10 150 --55 to +150 Unit V V A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK344 |
Hitachi |
N-Channel MOSFET | |
2 | 2SK3440 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3441 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK3442 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3443 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK3444 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK3445 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK3446 |
Renesas Technology |
Silicon N Channel Power MOS FET | |
9 | 2SK3447 |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | 2SK3448 |
Sanyo Semicon Device |
N-Channel MOSFET | |
11 | 2SK34 |
ETC |
Transistor | |
12 | 2SK3402 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |