2SK3440 - Toshiba Semiconductor

2SK3440 N-Channel MOSFET

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 60 V) Enhancement-mode: Vth = 2.0 to 4.

Features

ol Rth (ch-c) Max 1.00 Unit °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 350 µH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. 4 1 2 3 1 2002-03-04 2SK3440 Electrical Characteristics (Note 4) (Tc = 25°C) Characteristics Gate leakage current Drain cut-off.