Ordering number : ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features • • • • Package Dimensions unit : mm 2087A [2SK3448] 2.5 1.45 6.9 1.0 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping. 4.5 1.0 0.6 1.0 0.9 0.5 1 2 3 0.45 Specifications Absolute Maximum Ratings at Ta=25°C Parame.
•
•
•
•
Package Dimensions
unit : mm 2087A
[2SK3448]
2.5 1.45 6.9 1.0
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Meets radial taping.
4.5
1.0
0.6
1.0
0.9
0.5
1
2
3
0.45
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Source 2 : Drain 3 : Gate
2.54 2.54
SANYO : NMP
Ratings 60 ± 20 2.5 10 1 150 --55 to +150 Unit V V A A W °C °C
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK344 |
Hitachi |
N-Channel MOSFET | |
2 | 2SK3440 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3441 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | 2SK3442 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3443 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK3444 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK3445 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | 2SK3446 |
Renesas Technology |
Silicon N Channel Power MOS FET | |
9 | 2SK3447 |
Renesas Technology |
Silicon N Channel Power MOS FET | |
10 | 2SK3449 |
Sanyo Semicon Device |
N-Channel MOSFET | |
11 | 2SK34 |
ETC |
Transistor | |
12 | 2SK3402 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET |