2SK3447 - Renesas Technology

2SK3447 Silicon N Channel Power MOS FET

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features • Capable of 4 V gate drive • Low drive current • Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V) www.DataSheet4U.com Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate .

Features

• Capable of 4 V gate drive
• Low drive current
• Low on-resistance RDS (on) = 1.5 Ω typ. (at VGS = 10 V) www.DataSheet4U.com Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92MOD) D G 1. Source 2. Drain 3. Gate 32 1 S Rev.7.00 Sep 07, 2005 page 1 of 6 2SK3447 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Ta = 25°C Symbol VDSS VGSS ID ID (pulse) Note.