2SK3444 - Toshiba Semiconductor

2SK3444 N-Channel MOSFET

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5..

Features

el to case Symbol Rth (ch-c) Max 1.00 Unit °C/W Notice: Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. 4 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 Marking 2 3 Part No. (or abbreviation code) K3444 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. .