2SK3069 - Hitachi Semiconductor

2SK3069 N-Channel MOSFET

2SK3069 Silicon N Channel MOS FET High Speed Power Switching ADE-208-694I (Z) 10th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3069 Absolute Maximum Ratings (Ta = 25°C) Item Drain to .

Features

• Low on-resistance R DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source Outline TO
  –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3069 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note 3 Note 3 Note 2 Note 1 Ratings 60 ±20 75 300 75 50 214 100 150
  –55 to +150 Unit V V A A A A mJ W .