2SK3001 - Hitachi Semiconductor

2SK3001 GaAs HEMT Low Noise Amplifier

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) • Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without not.

Features

• Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz)
• High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz)
• Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out wi.