2SK3060 - NEC

2SK3060 N-CHANNEL POWER MOS FET

The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB .

Features

• Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 2400 pF TYP.
• Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2SK3060-S TO-262 2SK3060-ZJ 2SK3060-Z TO-263 TO-220SMDNote Note This package is produced only in Japan. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS(AC) Gate to Source Voltage (VDS = 0 V) VGSS(DC) Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) Tot.