2SK3067 - Toshiba Semiconductor

2SK3067 N-Channel MOSFET

2SK3067 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3067 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 4.2 Ω (typ.) : |Yfs| = 1.7 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 600 V) : Vth =.

Features

haracteristics Thermal reverse, channel to case Thermal reverse, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 5.0 62.5 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-06-05 2SK3067 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drai.