2SK3064 - Panasonic Semiconductor

2SK3064 N-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.1±0.1 1.25±0.1 0.425 0.65 1 q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron .

Features

+0.1 1 Silicon MOS FETs (Small Signal) PD  Ta 200 120 2SK3064 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V 50 Allowable power dissipation PD (mW) 160 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 4.5V 4.0V 40 3.5V 20 3.0V 2.5V 40 120 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) ID  VGS 240 VDS=5V 200 30 100 VIN  IO VO=5V Ta=25˚C Drain current ID (mA) 160 Ta=
  –25˚C 120 25˚C 75˚C 80 Input voltage VIN.