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2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4 V gate drive • Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) • Enhancement.
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A Note 4: Repetitive rating: pulse width limited by maximum junction temperature. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK296 |
Hitachi Semiconductor |
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| 2 | 2SK2960 |
Panasonic |
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|
| 3 | 2SK2960 |
Inchange Semiconductor |
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|
| 4 | 2SK2961 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2962 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 6 | 2SK2964 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 7 | 2SK2965 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 8 | 2SK2967 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 9 | 2SK2968 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2968 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | 2SK2969 |
Sanyo Semicon Device |
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|
| 12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|