2SK2962 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2962 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.2 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) .
ly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK296 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2960 |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
3 | 2SK2960 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2961 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
5 | 2SK2963 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
6 | 2SK2964 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
7 | 2SK2965 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
8 | 2SK2967 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
9 | 2SK2968 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK2968 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2969 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |