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2SK2963 |
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| Part Number | 2SK2963 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4 V gate drive • Low drain-source ON res... |
| Features |
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum junction temperature.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/... |
| Document |
 2SK2963 Data Sheet
PDF 311.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK296 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK2960 |
Panasonic |
Silicon N-Channel Power F-MOS FET |
|
| 3 | 2SK2960 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2961 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2962 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|