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2SK2968 - INCHANGE

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2SK2968 N-Channel MOSFET

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operat.

Features


·Drain Current
  –ID= 10A@ TC=25℃
·Drain Source Voltage- : VDSS= 900V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 150 W TJ .

The same part from a different manufacturer

Datasheet 2SK2968 - Toshiba Semiconductor 2SK2968

2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and .

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