·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operat.
·Drain Current
–ID= 10A@ TC=25℃
·Drain Source Voltage-
: VDSS= 900V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.25Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Pluse
30
A
PD
Total Dissipation @TC=25℃
150
W
TJ
.
2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK296 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2960 |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
3 | 2SK2960 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK2961 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
5 | 2SK2962 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
6 | 2SK2963 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
7 | 2SK2964 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
8 | 2SK2965 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
9 | 2SK2967 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
10 | 2SK2969 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
11 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |