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2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2965 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 10 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vt.
vy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Character.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK296 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK2960 |
Panasonic |
Silicon N-Channel Power F-MOS FET |
|
| 3 | 2SK2960 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2961 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2962 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 6 | 2SK2963 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 7 | 2SK2964 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 8 | 2SK2967 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 9 | 2SK2968 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 10 | 2SK2968 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | 2SK2969 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|