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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2917 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.
·With TO-3PN packaging
·High speed switching
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
18
IDM
Drain Current-Single Pulsed
72
PD
Total Dissipation
90
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SY.
2SK2917 - Toshiba Semiconductor
2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2917 Chopper Regulator, DC−DC Converter .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2911 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2912 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 6 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 7 | 2SK2915 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 8 | 2SK2916 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 9 | 2SK2918-01 |
Fuji Electric |
Power MOSFET |
|
| 10 | 2SK2919 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 11 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 12 | 2SK2901-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOS-FET |
|