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2SK2917 |
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| Part Number | 2SK2917 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2917 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-L... |
| Features |
·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation 90 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SY... |
| Document |
 2SK2917 Data Sheet
PDF 205.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2911 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2912 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|