2SK2915 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enh.
sing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET | |
2 | 2SK2911 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK2912 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
4 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
5 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
6 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
7 | 2SK2916 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
8 | 2SK2917 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2917 |
INCHANGE |
N-Channel MOSFET | |
10 | 2SK2918-01 |
Fuji Electric |
Power MOSFET | |
11 | 2SK2919 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |