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Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-So.
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm 2091A
[2SK2911]
0.5
0.4 3 0.16 0 to 0.1
1 0.95 0.95 2 1.9 2.9
0.8 1.1
0.5
1.5 2.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Gate 2 : Source 3 : Drain SANYO : CP
Ratings 100 ±10 0.25 1 0.25 150
–55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteris.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2912 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 6 | 2SK2915 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 7 | 2SK2916 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 8 | 2SK2917 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 9 | 2SK2917 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | 2SK2918-01 |
Fuji Electric |
Power MOSFET |
|
| 11 | 2SK2919 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |
|