2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°.
• Low on-resistance R DS = 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SK2912(L), 2SK2912(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET | |
2 | 2SK2911 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
4 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
5 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
6 | 2SK2915 |
Toshiba Semiconductor |
N-Channel MOSFET | |
7 | 2SK2916 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor | |
8 | 2SK2917 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2917 |
INCHANGE |
N-Channel MOSFET | |
10 | 2SK2918-01 |
Fuji Electric |
Power MOSFET | |
11 | 2SK2919 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2900-01 |
Fuji Electric |
N-channel MOS-FET |