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2SK2912 |
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| Part Number | 2SK2912 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can b... |
| Features |
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)*... |
| Document |
 2SK2912 Data Sheet
PDF 53.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2911 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 3 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|