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2SK2911 |
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| Part Number | 2SK2911 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2... |
| Features |
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP Ratings 100 ±10 0.25 1 0.25 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteris... |
| Document |
 2SK2911 Data Sheet
PDF 229.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK291 |
Hitachi Semiconductor |
Silicon N-Channel Junction FET |
|
| 2 | 2SK2912 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2912L |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2912S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2914 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|