2SK2869 - Hitachi Semiconductor

2SK2869 N-Channel MOSFET

2SK2869 Silicon N Channel MOS FET High Speed Power Switching ADE-208-570 1st. Edition Features • Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source v.

Features

• Low on-resistance R DS = 0.033 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline DPAK
  –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2869 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)
* I DR I AP.